IEEE 38th International System-on-Chip Conference (SOCC)2025
Cryogenic Characterization and Compact Modeling of Forward Body-Bias Effects in 180nm Bulk CMOS TransistorsStudent Paper Contest — First Place
This paper evaluates forward body biasing in 180 nm bulk CMOS at 7 K. It presents transistor measurements, a BSIM4-based compact model, and ring-oscillator simulations. Forward body biasing recovered more than 40% of the oscillation-frequency loss, and its combination with supply-voltage scaling reduced the power-delay product by 34%.